Poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno [3,2‐b]thiophene)s—High‐Mobility Semiconductors for Thin‐Film Transistors

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Abstract

Field-effect transistor properties, structural design, synthesis, and characterization of the poly(2,5-bis(2-thienyl)-3,6-dialkylthieno[3,2-b]thiophene) thin-film semiconductors shown in the figure are described. Using low-temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm2 V–1 s–1 and a current on/off ratio of 107 are obtained.

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