Conjugated‐Polymer‐Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect
Advanced Materials2010Vol. 22(15), pp. 1731–1735
Citations Over TimeTop 1% of 2010 papers
Xiaodong Zhuang, Yu Chen, Gang Liu, Peipei Li, Chunxiang Zhu, E. T. Kang, Koon‐Gee Noeh, Bin Zhang, Jin‐Hui Zhu, Yongxi Li
Abstract
An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of −1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of −1.0 V.
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