High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
Advanced Materials2016Vol. 28(32), pp. 6985–6992
Citations Over TimeTop 1% of 2016 papers
Jaewoo Shim, Aely Oh, Dong‐Ho Kang, Seyong Oh, Sung Kyu Jang, Jaeho Jeon, Min Hwan Jeon, Minwoo Kim, Changhwan Choi, Jaehyeong Lee, Sungjoo Lee, Geun Young Yeom, Young Jae Song, Jin‐Hong Park
Abstract
A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.
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