A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Citations Over TimeTop 10% of 2016 papers
Abstract
Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm-1 and Seebeck coefficient from 100 to 60 μV K-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m-1 K-1 gives rise to a thermoelectric Figure of merit ZT ∼ 10-4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.
Related Papers
- → Strongly Correlated Properties and Enhanced Thermoelectric Response in Ca3Co4−xMxO9 (M = Fe, Mn, and Cu)(2009)145 cited
- → Improvement of the thermoelectric characteristics of Fe-doped misfit-layered Ca3Co4−xFexO9+δ (x=, 0.05, 0.1, and 0.2)(2006)101 cited
- → Effect of Manganese Dioxide Nanorods on the Thermoelectric Properties of Cement Composites(2018)73 cited
- → Connectivity-driven bi-thermoelectricity in heteroatom-substituted molecular junctions(2018)33 cited
- → Influence of the sheet metal Seebeck coefficient on wear detection based on thermoelectric measurement(2021)1 cited