Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Advanced Science2017Vol. 4(8), pp. 1600435–1600435
Citations Over TimeTop 1% of 2017 papers
Su‐Ting Han, Liang Hu, Xiandi Wang, Ye Zhou, Y. J. Zeng, Shuangchen Ruan, Caofeng Pan, Zhengchun Peng
Abstract
Solution-processed black phosphorus quantum-dot-based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.
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