Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor
Microwave and Optical Technology Letters2004Vol. 42(1), pp. 74–77
Abstract
Abstract The beat‐frequency dependency of the optical heterodyne mixing characteristics of a transferred‐substrate A1InAs/GaInAs double heterojunction bipolar transistor (DHBT) have been investigated from 1 to 25 GHz in 1‐GHz steps at a center wavelength of 1319 nm. The experimental results show a high‐speed but low‐responsivity response followed by a low‐speed but high‐responsivity response. The 3‐dB bandwidth of the low‐speed response is 3 GHz. Various ways of increasing the high‐frequency responsivity are discussed. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 74–77, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20213
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