30–512 MHz power amplifier design using GaN transistor
Microwave and Optical Technology Letters2018Vol. 60(5), pp. 1280–1286
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Abstract
Abstract In this article a class AB single‐ended power amplifier with 30‐512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.
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