High impedance transforming simplified Balun architecture in microstrip technology
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Abstract
Abstract In this article, a simplified balun structure inherently capable of providing high impedance transformation is proposed. The structure fulfills the requirements of a balun such as matching at all the ports, output ports phase difference of 180°, and isolation between output ports. The design is a symmetric network and is able to provide fully closed‐form design equations using the even‐odd mode analysis. The proposed systematic design approach also augments the overall design process. The presence of free variables in design equations provide a number of flexibility to the balun structure including the wide range of impedance transformation ratios of 0.1 to 10.0. A prototype, operating at 1 GHz, on Rogers RT/duroid 5880 substrate demonstrates a very good agreement between the measured and EM simulated results with amplitude and phase imbalance of 1 dB and 10°, respectively.
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