Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell
Citations Over TimeTop 20% of 2018 papers
Abstract
Abstract Ternary zinc tin oxide (ZTO) is one of the few environmental compatible buffer materials with the potential of replacing the n ‐CdS buffer in Cu(In,Ga)Se 2 (CIGS) solar cells and other photovoltaic systems once its properties are fully understood and optimized. In this work, ZTO films were grown by atomic layer deposition and were logically characterized with the aim of understanding the correlations between compositional changes and film properties. The ZnO:SnO 2 pulse ratio significantly affected the growth rate, crystal structure, morphology, and band gap of the ZTO films. By controlling the Sn/(Sn + Zn) atomic ratio, the optical band gap of the ZTO films was tuned between 3.05 and 3.36 eV. Integrating the ZTO films as buffer layers in CIGS solar cells, we observed that films with Sn concentrations of 9 to 16 at.% yielded photo‐conversion efficiency close to 14%, which was very comparable to efficiency attained with the commonly used CdS buffer. Furthermore, using X‐ray photoelectron spectroscopy analysis, we correlated the current‐voltage behavior of the cells to the conduction band offset at the ZTO/ CIGS interface.
Related Papers
- → Research on Copper Indium Gallium Selenide (CIGS) Thin-Film Solar Cells(2021)9 cited
- → Comparison of Interface Characterization between Ag(In,Ga)Se2 and Cu(In,Ga)Se2 Solar Cells by High-Angle-Annular Dark-Field Scanning Transmission Electron Microscopy(2011)12 cited
- Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS(2012)
- → Optimization of Cu(In,Ga)Se2 Solar Cell and its Comparative Performance Analysis for Employing Different Buffer and Window Layers Through Numerical Simulation and Analysis Using SCAPS-1D(2020)
- → Fabrication of Copper Indium Gallium Diselenide (Cu(In,Ga)Se 2 ) Thin Film Solar Cell(2021)