GaAs microcavity exciton‐polaritons in a trap

Citations Over TimeTop 25% of 2008 papers

Abstract

Abstract We present a simple method to create an in‐plane lateral potential in a semiconductor microcavity using a metal thin‐film. Two types of potential are produced: a circular aperture and a one‐dimensional (1D) periodic grating pattern. The amplitude of the potential induced by a 24 nm – 6 nm Au/Ti film is on the order of a few hundreds of μeV measured at 6–8 K. Since the metal layer makes the electromagnetic fields to be close to zero at the metal–semiconductor interface, the photon mode is confined more inside of the cavity. As a consequence, the effective cavity length is reduced under the metal film, and the corresponding cavity resonance is blue‐shifted. Our experimental results are in a good agreement with theoretical estimates. In addition, by applying a DC electric voltage to the metal film, we are able to modify the quantum well exciton mode due to the quantum confined Stark effect, inducing a ∼1 meV potential at ∼20 kV/cm. Our method produces a controllable in‐plane spatial trap potential for lower exciton‐polaritons (LPs), which can be a building block towards 1D arrays and 2D lattices of LP condensates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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