P‐9: Parylene / Al 2 O 3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors
SID Symposium Digest of Technical Papers2017Vol. 48(1), pp. 1258–1261
Citations Over TimeTop 22% of 2017 papers
Xiaoliang Zhou, Gang Wang, Yang Shao, Letao Zhang, Huiling Lü, Shuming Chen, Dedong Han, Yi Wang, Shengdong Zhang
Abstract
Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al 2 O 3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al 2 O 3 sputtering. Al 2 O 3 blocks O 2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.
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