51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement
SID Symposium Digest of Technical Papers2020Vol. 51(1), pp. 754–757
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Abstract
Highly delocalized electrons and parasitic emissions are serious problems in InP/ZnS quantum dot light emitting diodes. This work provided several approaches from the perspective of device design and physical mechanism to address the above problems. As a result, high efficiency InP/ZnS quantum dot light emitting diodes were achieved.
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