Silicon–Hydrogen Bonding Configuration Modified by Layer Stacking Sequence in Silicon Heterojunction Solar Cells
Citations Over TimeTop 25% of 2022 papers
Abstract
Recent improvements in highly efficient crystalline silicon (c-Si) solar cells have relied on surface passivation. Hydrogen plays a crucial role in the surface passivation of silicon heterojunction (SHJ) solar cells because Si–H bonds passivate dangling bonds in amorphous silicon and on the c-Si surface. In this work, we demonstrate that the Si–H bonding configuration is modified by layer stacking sequence for SHJs. The quality of surface passivation strongly correlates with low-temperature hydrogen effusion from the SHJ structure. Our results show that the deposition of doped layers on intrinsic amorphous silicon supplies additional hydrogen to the amorphous/crystalline heterostructure. Moreover, the deposition of a p-layer modifies the microstructure of the intrinsic layer underneath, whereas depositing an n-layer does not induce structural changes. We suggest that the low-temperature hydrogen effusion characteristics can be used as a sensitive indicator for examining the passivation quality of SHJ solar cells.
Related Papers
- → Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation(2002)243 cited
- → Passivation of double-positioning twin boundaries in CdTe(2004)32 cited
- → Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO2 matrix by H2-passivation(2014)11 cited
- → Passivation Challenges with Ge and III/V Devices(2012)5 cited
- → Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon(2002)9 cited