Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe₂/MoS₂ Heterojunctions Treated with Polymer Acid

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Abstract

The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe₂/MoS₂ p-n heterojunctions through surface treatment using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence spectroscopy indicated the generation of trions in the WSe₂ and MoS₂ layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe₂/MoS₂ p-n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of anti-ambipolar transistor characteristics increased considerably, and ternary inverter characteristics with three stable logic states, "1", "1/2", and "0", were realized. Interestingly, the intermediate logic state 1/2, which results from the negative differential transconductance characteristics, was realized by the turn-on of all component FETs, as the current of the FETs increased after PMMA-co-PMAA treatment. The electron-rich carboxyl acid moieties in PMMA-co-PMAA can undergo coordination with the metal Mo or W atoms present in the Se or S vacancies, respectively, resulting in the modulation of charge density. These features yielded distinctive FETs and ternary inverters for MVLCs using cross-type WSe₂/MoS₂ heterojunctions.

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