High-Performance Flexible Ultraviolet (UV) Phototransistor Using Hybrid Channel of Vertical ZnO Nanorods and Graphene
Citations Over TimeTop 10% of 2015 papers
Abstract
A flexible ultraviolet (UV) photodetector based on ZnO nanorods (NRs) as nanostructure sensing materials integrated into a graphene (Gr) field-effect transistor (FET) platform is investigated with high performance. Based on the negative shift of the Dirac point (VDirac) in the transfer characteristics of a phototransistor, high-photovoltage responsivity (RV) is calculated with a maximum value of 3 × 10(8) V W(-1). The peak response at a wavelength of ∼365 nm indicated excellent selectivity to UV light. The phototransistor also allowed investigation of the photocurrent responsivity (RI) and photoconductive gain (G) at various gate voltages, with maximum values of 2.5 × 10(6) A W(-1) and 8.3 × 10(6), respectively, at a gate bias of 5 V. The UV response under bending conditions was virtually unaffected and was unchanged after 10,000 bending cycles at a bending radius of 12 mm, subject to a strain of 0.5%. The attributes of high stability, selectivity, and sensitivity of this flexible UV photodetector based on a ZnO NRs/Gr hybrid FET indicate promising potential for future flexible optoelectronic devices.
Related Papers
- → Boosting Photocurrent via Heating BiFeO3 Materials for Enhanced Self‐Powered UV Photodetectors(2019)91 cited
- → Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes(2021)3 cited
- → Investigating inter-subband photocurrent in CdS/ZnSe quantum well photodetector for infrared applications(2020)2 cited
- → Studies on primary photocurrent of a-Si:H using xerographic and vidicon techniques(1981)1 cited