Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes
Citations Over TimeTop 10% of 2016 papers
Abstract
Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.
Related Papers
- → Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory(2013)5 cited
- → Resistive Random Access Memory (ReRAM)(2019)3 cited
- → Mechanisms and performance of metal oxide resistive RAM (RRAM)(2013)4 cited
- Progress in Development of Resistive RAM and Its Integration Technology(2009)
- → In-situ TEM observation of ReRAM switching(2014)