Inhibition of Zero Drift in Perovskite-Based Photodetector Devices via [6,6]-Phenyl-C61-butyric Acid Methyl Ester Doping

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Abstract

Zero drift can severely deteriorate the stability of the light-dark current ratio, detectivity, and responsivity of photodetectors. In this paper, the effects of a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-doped perovskite-based photodetector device on the inhibition of zero drift under dark state are discussed. Two kinds of photodetectors (Au/CH₃NH₃PbI_xCl_3-x/Au and Au/CH₃NH₃PbI_xCl_3-x:PCBM/Au) were prepared, and the materials and photodetector devices were measured by scanning electron microscopy, X-ray diffraction, photoluminescence, ultraviolet absorption spectra, and current-voltage and current-time measurements. It was found that similar merit parameters, including light-dark current ratio (∼102), detectivity (∼1011 Jones), and responsivity were obtained for these two kinds of photodetectors. However, the drift of Au/CH₃NH₃PbI_xCl_3-x:PCBM/Au devices is negligible, while a drift of ∼0.2 V exists in Au/CH₃NH₃PbI_xCl_3-x/Au devices. A new model is proposed based on the hindering theory of ion (vacancy) migration, and it is believed that the dopant PCBM can hinder the ion (vacancy) migration of perovskite materials to suppress the phenomenon of zero drift in perovskite-based photodetectors.

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