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Room-Temperature Processed Nb₂O₅ as the Electron-Transporting Layer for Efficient Planar Perovskite Solar Cells

ACS Applied Materials & Interfaces2017Vol. 9(27), pp. 23181–23188

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Xufeng Ling, Jianyu Yuan, Dongyang Liu, Yongjie Wang, Yannan Zhang, Si Chen, Haihua Wu, Feng Jin, Fu‐Peng Wu, Guozheng Shi, Xun Tang, Jiawei Zheng, Shengzhong Liu, Zhike Liu, Wanli Ma

Abstract

In this work, we demonstrate high-efficiency planar perovskite solar cells (PSCs), using room-temperature sputtered niobium oxide (Nb₂O₅) as the electron-transporting layer (ETL). Widely spread ETL-like TiO₂ often requires high-temperature (>450 °C) sintering, which is not desired for the fabrication of flexible devices. The amorphous Nb₂O₅ (labeled as a-Nb₂O₅) ETL, without any heat treatment, can give a best power conversion efficiency (PCE) of 17.1% for planar PSCs. Interestingly, the crystalline Nb₂O₅ (labeled as c-Nb₂O₅), with high-temperature (500 °C) annealing, results in a very similar PCE of 17.2%, indicating the great advantage of a-Nb₂O₅ in energy saving. We thus carried out a systematical investigation on the properties of the a-Nb₂O₅ film. The Hall effect measurements indicate both high mobility and conductivity of the a-Nb₂O₅ film. Kelvin probe force microscopy measurements define the Fermi levels of a-Nb₂O₅ and c-Nb₂O₅ as -4.31 and -4.02 eV, respectively, which allow efficient electron extraction at the Nb₂O₅/perovskite interface, regardless of the additional heat treatment on Nb₂O₅ film. Benefitting from the low-temperature process, we further demonstrated flexible PSCs based on a-Nb₂O₅, with a considerable PCE of 12.1%. The room-temperature processing and relatively high device performance of a-Nb₂O₅ suggest a great potential for its application in optoelectrical devices.

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Abstract

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