Giant Enhancement and Directional Second Harmonic Emission from Monolayer WS2 on Silicon Substrate via Fabry-Pérot Micro-Cavity
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Abstract
Two-dimensional transition metal dichalcogenides (TMDs) possess large second-order optical nonlinearity, making them ideal candidates for miniaturized on-chip frequency conversion devices, all-optical interconnection, and optoelectronic integration components. However, limited by subnanometer thickness, the monolayer TMD exhibits low second harmonic generation (SHG) conversion efficiency (2 film with a silicon hole matrix to enhance the SH emission. A maximum enhancement (∼1580 times) is achieved by tuning the excitation wavelength to be resonant with the microcavity modes. The giant enhancement is attributed to the strong electric field enhancement in the F-P cavity and the oscillator strength enhancement of excitons from suspended WS2. Moreover, directional SH emission (divergence angle ∼5°) is obtained benefiting from the resonance of the F-P microcavity. Our research results can provide a practical sketch to develop both high-efficiency and directional nonlinear optical devices for silicon-based on-chip integration optics.
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