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Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

ACS Nano2015Vol. 9(8), pp. 8070–8077

Citations Over TimeTop 1% of 2015 papers

Jing Wu, Gavin Kok Wai Koon, Du Xiang, Cheng Han, Chee Tat Toh, Eeshan Sandeep Kulkarni, Ivan Verzhbitskiy, Alexandra Carvalho, Aleksandr Rodin, Steven P. Koenig, Goki Eda, Wei Chen, A. H. Castro Neto, Barbaros Özyilmaz

Abstract

Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10(4) A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material and 10(7) times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature.

Citations Over TimeTop 1% of 2015 papers

Abstract

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