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Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

ACS Nano2018Vol. 12(7), pp. 7253–7263

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Matin Amani, Chaoliang Tan, George Zhang, Chunsong Zhao, James Bullock, Xiaohui Song, Hyung‐Jin Kim, Vivek Raj Shrestha, Yang Gao, Kenneth B. Crozier, Mary Scott, Ali Javey

Abstract

Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated themselves to be excellent candidates for high-performance infrared photodetectors and transistors. However, high-quality bP can be obtained only via mechanical exfoliation from high-temperature- and high-pressure-grown bulk crystals and degrades rapidly when exposed to ambient conditions. Here, we report solution-synthesized and air-stable quasi-2D tellurium (Te) nanoflakes for short-wave infrared (SWIR) photodetectors. We perform comprehensive optical characterization via polarization-resolved transmission and reflection measurements and report the absorbance and complex refractive index of Te crystals. It is found that this material is an indirect semiconductor with a band gap of 0.31 eV. From temperature-dependent electrical measurements, we confirm this band-gap value and find that 12 nm thick Te nanoflakes show high hole mobilities of 450 and 1430 cm2 V-1 s-1 at 300 and 77 K, respectively. Finally, we demonstrate that despite its indirect band gap, Te can be utilized for high-performance SWIR photodetectors by employing optical cavity substrates consisting of Au/Al₂O₃ to dramatically increase the absorption in the semiconductor. By changing the thickness of the Al₂O₃ cavity, the peak responsivity of Te photoconductors can be tuned from 1.4 μm (13 A/W) to 2.4 μm (8 A/W) with a cutoff wavelength of 3.4 μm, fully capturing the SWIR band. An optimized room-temperature specific detectivity ( D*) of 2 × 109 cm Hz1/2 W-1 is obtained at a wavelength of 1.7 μm.

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Abstract

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