Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
Citations Over TimeTop 10% of 2012 papers
Abstract
We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO(2)) dielectric with a maximum temperature of 350 °C. The formation of ZrO(2) films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H(2)O(2)). The H(2)O(2) forms peroxo groups in the ZrO(2) film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO(2) film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO(2) film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO(2) films at 350 °C. These TFTs had a mobility of 7.21 cm(2)/(V s), a threshold voltage (V(th)) of 3.22 V, and a V(th) shift of 1.6 V under positive gate bias stress.
Related Papers
- → An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs(2014)28 cited
- → Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts(2014)13 cited
- → A Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor(2013)2 cited
- THE EQUILIBRIUM DIAGRAM OF INDIUM-ZIRCONIUM IN THE REGION 0-26 AT. PCT In(1958)
- A novel a-InGaZnO TFT based voltage programmed pixel circuit to compensate threshold voltage and mobility variations(2013)