Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors
ACS Applied Materials & Interfaces2014Vol. 6(11), pp. 8575–8579
Citations Over TimeTop 10% of 2014 papers
Shuxiang Wu, Lizhu Ren, Jian Qing, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Xiang Zhou, Shuwei Li
Abstract
We report reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature. The memristors exhibit high optical transparency, long retention, and excellent antifatigue characteristics. The high performances are promising for employing ITO/LaAlO3/SrTiO3 memristors in nonvolatile transparent memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the migration of positively charged oxygen vacancies from the SrTiO3 substrate to the LaAlO3 film, resulting in Poole-Frenkel emission for the low resistance state and thermionic emission for the high resistance state.
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