Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
ACS Applied Materials & Interfaces2014Vol. 6(16), pp. 13496–13501
Citations Over TimeTop 10% of 2014 papers
Seokhyun Yoon, Young Jun Tak, Doo Hyun Yoon, Uy Hyun Choi, Jin‐Seong Park, Byung Du Ahn, Hyun Jae Kim
Abstract
We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.
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