Impact of Copper Overpressure on the Synthesis of Hexagonal Boron Nitride Atomic Layers
ACS Applied Materials & Interfaces2014Vol. 6(19), pp. 16755–16762
Citations Over TimeTop 21% of 2014 papers
Abstract
Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.
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