Multiscale Modeling of the Electrostatic Impact of Self-Assembled Monolayers used as Gate Dielectric Treatment in Organic Thin-Film Transistors
ACS Applied Materials & Interfaces2014Vol. 6(17), pp. 15372–15378
Citations Over TimeTop 10% of 2014 papers
Alexander Mityashin, Otello Maria Roscioni, Luca Muccioli, Claudio Zannoni, Victor Geskin, Jérôme Cornil, Dimitri Janssen, Soeren Steudel, Jan Genoe, Paul Heremans
Abstract
This study sheds light on the microscopic mechanisms by which self-assembled monolayers (SAMs) determine the onset voltage in organic thin-film transistors (OTFTs). Experiments and modeling are combined to investigate the self-assembly and electrostatic interaction processes in prototypical OTFT structures (SiO2/SAM/pentacene), where alkylated and fluoroalkylated silane SAMs are compared. The results highlight the coverage-dependent impact of the SAM on the density of semiconductor states and enable the rationalization and the control of the OTFT characteristics.
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