Flat-Lying Semiconductor–Insulator Interfacial Layer in DNTT Thin Films
Citations Over TimeTop 11% of 2014 papers
Abstract
The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.
Related Papers
- → Recognition and Drop-Off Detection of Insulator Based on Aerial Image(2016)48 cited
- → Improving outdoor insulator performances installed at coastal area using silicone rubber coating(2012)16 cited
- → Mitigation of outdoor insulators failure using silicone coating(2011)4 cited
- → Effects of aging treatment on properties of SiO2 thin films with different deposition technology(2019)
- → Simulation Analysis of Temperature Distribution of Insulator String with Low Resistance Insulator Under Different Pollution Degrees(2023)