Formation of Inert Bi2Se3(0001) Cleaved Surface
Crystal Growth & Design2011Vol. 11(12), pp. 5507–5514
Citations Over TimeTop 10% of 2011 papers
Victor V. Atuchin∥⊥, V. A. Golyashov, К. А. Кох, Ilya V. Korolkov, A. S. Kozhukhov, В. Н. Кручинин, S. V. Makarenko, L.D. Pokrovsky, Igor P. Prosvirin, Konstantin Romanyuk, О. Е. Терещенко
Abstract
A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi2Se3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi2Se3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.
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