Epitaxial Electrodeposition of High-Aspect-Ratio Cu2O(110) Nanostructures on InP(111)
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Abstract
Epitaxial cuprous oxide nanostructures with high aspect ratio were deposited electrochemically on n-InP(111) from aqueous solution at room temperature. High-resolution X-ray diffraction shows that the Cu2O and InP form three equivalent epitaxial orientation relationships that are rotated 120° relative to each other: Cu2O(110)[100] || InP(111)[11̄0], Cu2O(110)[100] || InP(111)[1̄01], and Cu2O(110)[100] || InP(111)[011̄]. The size and aspect ratio of the Cu2O nanostructures depend on the applied deposition current density. At a deposition current density of 0.125 mA/cm2, uniformly sized nanostructures 30 nm wide and 1000 nm long were obtained. Transmission electron microscopy reveals an amorphous, oxygen-rich interlayer and a crystalline Cu3P layer between the Cu2O and InP.
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