Film Morphology and Thin Film Transistor Performance of Solution-Processed Oligothiophenes
Citations Over TimeTop 10% of 2004 papers
Abstract
The relationship between film morphology and thin film transistor (TFT) performance was investigated for two symmetrical α,ω-substituted sexithiophene derivatives containing thermally removable solubilizing groups. Solution deposition methods such as spin-coating, dip-casting, and inkjet-printing were optimized for solvent and annealing temperatures, and several substrate surface treatments were explored. The resulting thin films were characterized with AFM and the observed semiconductor performance was found to correlate with the morphology of the films, with the most crystalline films exhibiting the highest performance. Devices showed overall mobilities as high as 0.07 cm2/V s with on/off ratios > 108, which are among the highest reported values for oligothiophenes solution cast at room temperature.
Related Papers
- → Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C(2010)94 cited
- → Effect of hydrogen in the gate insulator on the bottom gate oxide TFT(2010)10 cited
- 대면적 TFT-LCD를 위한 다결정 실리콘 박막 트랜지스터 ( The Poly-Si Thin Film Transistor for Large-area TFT-LCD )(1999)
- 저온 Poly-Si TFT를 이용한 모바일 디스플레이용 저소비전력 레벨쉬프터(2008)
- Influence Hydrogen on Electrical Properties of Zinc Tin Oxide (ZTO) Thin-Film Transistor(2015)