Conductivity and Field Effect Transistor of La2@C80 Metallofullerene
Journal of the American Chemical Society2003Vol. 125(27), pp. 8116–8117
Citations Over TimeTop 10% of 2003 papers
S. Kobayashi, Satoshi Mori, Satoru Iida, Hiroaki Ando, Taishi Takenobu, Yasujiro Taguchi, Akihiko Fujiwara, Atsushi Taninaka, Hisanori Shinohara, Yoshihiro Iwasa
Abstract
We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 x 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.
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