Polymer Electrolyte Gate Dielectric Reveals Finite Windows of High Conductivity in Organic Thin Film Transistors at High Charge Carrier Densities
Journal of the American Chemical Society2005Vol. 127(19), pp. 6960–6961
Citations Over TimeTop 10% of 2005 papers
Abstract
Finite regions of high conductivity were observed in both n- and p-channel organic thin film transistors based on polycrystalline organic semiconductor films and a solution-processed, solid polymer electrolyte gate dielectric. The transition from a highly conductive state to a more insulating state with increasing gate bias may be attributed to the realization of carrier densities greater than 1014 charges/cm2 in the semiconductor film.
Related Papers
- → Solution-processed stacked TiO2 and Al2O3 dielectric layers for high mobility thin film transistor(2018)9 cited
- → High-mobility, low voltage organic thin film transistors(2003)25 cited
- → Doping Dependent Conductivity in Organic Semiconductors(2006)3 cited
- The Investigation and Application of Pentacene TFT(2004)