n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups
Journal of the American Chemical Society2005Vol. 127(43), pp. 14996–14997
Citations Over TimeTop 1% of 2005 papers
Shinji Ando, Ryo Murakami, Jun‐ichi Nishida, Hirokazu Tada, Youji Inoue, Shizuo Tokito, Yoshiro Yamashita
Abstract
Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.
Related Papers
- → Anisotropic Charge Transport in Bisindenoanthrazoline-Based n-Type Organic Semiconductors(2012)56 cited
- → BODIPY derivatives as n-type organic semiconductors: Isomer effect on carrier mobility(2011)34 cited
- → Synthesis and Antimicrobial Studies of Some Novel Bis-[1,3,4]thiadiazole and Bis-thiazole Pendant to Thieno[2,3-b]thiophene Moiety(2012)35 cited
- → Effect of Charge Mobility for Organic Photovoltaic Devices(2006)1 cited
- → Investigation into the modeling of field-effect mobility in disordered organic semiconductors(2005)1 cited