Se2(B2O7): A New Type of Second-Order NLO Material
Journal of the American Chemical Society2006Vol. 128(24), pp. 7750–7751
Citations Over TimeTop 10% of 2006 papers
Abstract
Exploration on the compounds in the selenite-borate system led to the discovery of a new second-order NLO material, Se2B2O7, with a SHG efficiency of about 2.2 times that of KDP (KH2PO4). Its structure features a 3D network with helical tunnels, and it is transparent in the UV and visible region. The compound is a wide band gap semiconductor.
Related Papers
- → Porous III–V compound semiconductors: formation, properties, and comparison to silicon(2003)50 cited
- → Polarity determination in (001)-oriented AIII– Bvcompound semiconductors by the Kossel technique and chemical etching(1990)31 cited
- Compound semiconductors for high-temperature electronic applications(1981)
- Zone leveling and solution growth of complex compound semiconductors in space(1986)
- On The Compound Semiconductor Materials(2010)