High-Performance Transistor Based on Individual Single-Crystalline Micrometer Wire of Perylo[1,12-b,c,d]thiophene
Journal of the American Chemical Society2007Vol. 129(7), pp. 1882–1883
Citations Over TimeTop 1% of 2007 papers
Yanming Sun, Lin Tan, Shidong Jiang, Hualei Qian, Zhaohui Wang, Dongwei Yan, Chong‐an Di, Ying Wang, Weiping Wu, Gui Yu, Shouke Yan, Chunru Wang, Wenping Hu, Yunqi Liu, Daoben Zhu
Abstract
We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm2 V-1 s-1, an on/off ratio of 105, and a low threshold voltage of −6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm2 V-1 s-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S···S interactions may contribute to the high performance.
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