Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
Journal of the American Chemical Society2010Vol. 132(19), pp. 6634–6635
Citations Over TimeTop 1% of 2010 papers
Abstract
We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.
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