Indacenodithiophene Semiconducting Polymers for High-Performance, Air-Stable Transistors
Journal of the American Chemical Society2010Vol. 132(33), pp. 11437–11439
Citations Over TimeTop 1% of 2010 papers
Weimin Zhang, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael D. McGehee, Alberto Salleo, James Kirkpatrick, Raja Shahid Ashraf, Thomas D. Anthopoulos, Martin Heeney, Iain McCulloch
Abstract
High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm(2)/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.
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