3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics
Citations Over TimeTop 10% of 2011 papers
Abstract
We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm(2) V(-1) s(-1)) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed.
Related Papers
- → Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C(2010)93 cited
- → The status and prospects of photovoltaics in Poland(1999)9 cited
- 대면적 TFT-LCD를 위한 다결정 실리콘 박막 트랜지스터 ( The Poly-Si Thin Film Transistor for Large-area TFT-LCD )(1999)
- Influence Hydrogen on Electrical Properties of Zinc Tin Oxide (ZTO) Thin-Film Transistor(2015)
- Spotlight on Tomorrow's Photovoltaics 's Photovoltaics 's Photovoltaics 's Photovoltaics 's Photovoltaics Exploit the abundant power of the sun(2011)