Crossing the Insulator-to-Metal Barrier with a Thiazyl Radical Conductor
Journal of the American Chemical Society2012Vol. 134(24), pp. 9886–9889
Citations Over TimeTop 10% of 2012 papers
Aaron Mailman, Stephen M. Winter, Xin Yu, Craig M. Robertson, Wenjun Yong, John S. Tse, Richard A. Secco, Zhenxian Liu, Paul A. Dube, Judith A. K. Howard, Richard T. Oakley
Abstract
The layered-sheet architecture of the crystal structure of the fluoro-substituted oxobenzene-bridged bisdithiazolyl radical FBBO affords a 2D π-electronic structure with a large calculated bandwidth. The material displays high electrical conductivity for a f = 1/2 system, with σ(300 K) = 2 × 10(-2) S cm(-1). While the conductivity is thermally activated at ambient pressure, with E(act) = 0.10 eV at 300 K, indicative of a Mott insulating state, E(act) is eliminated at 3 GPa, suggesting the formation of a metallic state. The onset of metallization is supported by infrared measurements, which show closure of the Mott-Hubbard gap above 3 GPa.
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