Na-Doped p-Type ZnO Microwires
Journal of the American Chemical Society2010Vol. 132(8), pp. 2498–2499
Citations Over TimeTop 10% of 2010 papers
Abstract
p-Type ZnO microwires were first synthesized by a simple chemical vapor deposition method using Na as the dopant source. p-Type doping was confirmed by the electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of the microwires was estimated to be approximately 2.1 cm(2) V(-1) S(-1).
Related Papers
- → La2MgTiO6:Bi3+/Mn4+ photoluminescence materials: Molten salt preparation, Bi3+ → Mn4+ energy transfer and thermostability(2020)21 cited
- → Photoluminescence of porous Si, oxidized then deoxidized chemically(1992)109 cited
- → Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence(2019)7 cited
- → Excitons imaging in hybrid organic-inorganic films(2012)3 cited
- Photoluminescence excitation spectroscopy yields bandgap of Ga_5In_5P containing relatively ordered domains(1993)