Geometric and Electronic Structures of Silicon Oxide Clusters
The Journal of Physical Chemistry B2001Vol. 105(9), pp. 1705–1709
Citations Over TimeTop 10% of 2001 papers
Abstract
A systematic study on the geometric and electronic structures of ground-state silicon oxide clusters (SinOm, where n, m = 1−8) has been performed using molecular orbital and density functional theories. We find that most of the structures contain planar or buckled ring units. Pendent silicon atoms bonded only to a single oxygen atom are found in silicon-rich clusters. Oxygen-rich clusters have perpendicular planar rings, while silicon monoxide like clusters usually form a large buckled ring. Structures made up of tetrahedrally bonded units are found only in two clusters. Furthermore, the energy gap and net charge distribution for clusters with different silicon:oxygen ratios have been calculated.
Related Papers
- → Si nanowires grown from silicon oxide(1999)278 cited
- → Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e‐beam evaporation of silicon monoxide(2015)8 cited
- → A simple large-scale synthesis of coaxial nanocables: silicon carbide sheathed with silicon oxide(2003)22 cited
- → Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide(2013)12 cited
- → ESR of silicon oxide thin-film capacitors(1978)2 cited