Self-Organized GaN Quantum Wire UV Lasers
The Journal of Physical Chemistry B2003Vol. 107(34), pp. 8721–8725
Citations Over TimeTop 1% of 2003 papers
Heon‐Jin Choi, Justin C. Johnson, Rongrui He, Sang‐Kwon Lee, Franklin Kim, Peter J. Pauzauskie, Joshua E. Goldberger, Richard J. Saykally, Peidong Yang
Abstract
Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al−Ga−As−P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al−Ga−N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al−Ga−N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.
Related Papers
- Study on PMMA performace by nanometre SiO_2 modified(2004)
- Study on Epoxy Resin by Nanometer CaCC_3 Modified(2004)
- Modification of Nanometer TiO_2 and Research Progress in the Application of Nanometer TiO_2 in the Leather Industry(2013)
- DEVELOPMENT OF NANOMETER V_2O_5 CATALYST(2002)
- Effect of nanometer-silica on UV curable dispersing system and nanometer-composites(2003)