Doping Dependence of the Electronic Structure of La1-xNaxMnO3 by Resonant X-ray Emission and X-ray Absorption Spectroscopy
The Journal of Physical Chemistry B2004Vol. 108(13), pp. 4018–4023
Citations Over TimeTop 14% of 2004 papers
Federica Bondino, M. Platé, Marco Zangrando, M. Zacchigna, Daniele Cocco, Alberto Comin, Ivano Alessandri, Lorenzo Malavasi, F. Parmigiani
Abstract
The electronic structure of La1 - xNaxMnO3 (x = 0, 0.08, and 0.15) thin films is investigated by resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy (XAS). The excitation energy of the Mn dd transitions is derived. For different carrier doping concentrations, a significant increase in the emission of the low-energy excitations is observed. This finding is consistent with the less-pronounced structural distortion and the increased density of empty eg-like majority states in the lower part of the conduction band of the lightly doped samples.
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