Growth Mechanism, Photoluminescence, and Field-Emission Properties of ZnO Nanoneedle Arrays
Citations Over TimeTop 10% of 2006 papers
Abstract
ZnO nanoneedle arrays have been grown on a large scale with a chemical vapor deposition method at 680 degrees C. Zn powder and O(2) gas are employed as source materials, and catalyst-free Si plates are used as substrates. Energy-dispersive X-ray and X-ray diffraction analyses show that the nanoneedles are almost pure ZnO and preferentially aligned in the c-axis direction of the wurtzite structure. The growth mechanism of ZnO nanoneedle arrays is discussed with the thermodynamic theory and concluded to be the result of the co-effect of the surface tension and diffusion. Photoluminescence spectrum of the as-grown products shows a strong emission band centering at about 484 nm, which originates from oxygen vacancies. Field-emission examination exhibits that the ZnO nanoneedle arrays have a turn-on voltage at about 5.3 V/microm.
Related Papers
- → Efficient field emission from ZnO nanoneedle arrays(2003)510 cited
- → Second-harmonic generation from a single wurtzite GaAs nanoneedle(2010)58 cited
- → Improved Morphologies and Enhanced Field Emissions of CuO Nanoneedle Arrays by Heating ZnO Coated Copper Foils(2009)35 cited
- → Creation of novel ZnO nanostructures: self-assembled nanoribbon/nanoneedle junction networks and faceted nanoneedles on hexagonal microcrystals(2003)22 cited
- → Observation of Strong Second Harmonic Generation from a Single Wurtzite GaAs Nanoneedle(2009)