An Investigation of the Formation and Growth of Oxide-Embedded Silicon Nanocrystals in Hydrogen Silsesquioxane-Derived Nanocomposites
The Journal of Physical Chemistry C2007Vol. 111(19), pp. 6956–6961
Citations Over TimeTop 10% of 2007 papers
Abstract
We report a detailed investigation into the formation of oxide-embedded Si nanocrystals formed during the thermally induced disproportionation of solid hydrogen silsesquioxane (HSQ) in a reducing atmosphere. Silicon nanodomain size, crystallinity, composition, bonding structure, and photoluminescent response were evaluated as functions of processing temperature and time using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectroscopy. Our interpretation of data obtained from these analyses provides a basis for a multistep process that yields oxide-embedded Si nanocrystals of controlled structure, composition, and size.
Related Papers
- → Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance(1999)6 cited
- → Study of nanoimprint pattern transfer on hydrogen silsesquioxane(2006)7 cited
- → Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography(2003)3 cited
- → Synthesis and fidelity study of ultraviolet-curable hydrogen silsesquioxane analogue as an elastomeric stamp(2016)1 cited
- PMSE 226-Synthesis and characteristics of hydrogen-bonding supramolecules composed of octaphenol-functionalized polyhedral oligomeric silsesquioxane(2008)