Rendering High Charge Density of States in Ionic Liquid-Gated MoS2 Transistors
The Journal of Physical Chemistry C2014Vol. 118(31), pp. 18278–18282
Citations Over TimeTop 17% of 2014 papers
Abstract
We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS2 nanosheets under high charge density state follows the Meyer-Neldel rule. The achieved high charge density allows the surface DOS estimation of MoS2 nanosheets, which have distinct peaks at 0.135 and 0.145 eV below the conduction band, with the largest DOS values of 9.75 × 1014 and 4.33 × 1014 cm–2 eV–1, respectively. This may represent the monolayer MoS2 nanosheets that coexist with the MoS2 multilayer in the channel area of the ionic liquid-gated MoS2 transistors.
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