Multiple ZnO Nanowires Field-Effect Transistors

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Abstract

We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC) dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50∼65 nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3∼11.5 μS at a drain voltage of 1∼5 V, a mobility of ∼30 cm2/V·s, and a carrier concentration of 9.4 × 1017 cm-3. For a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography with a back-gate structure.

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