Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices

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Abstract

Cd-enriched ambient, high quality n-type CdSe nanobelts (NBs) with various electron concentrations (from ∼1016 to 1018 cm−3), which can meet different device requirements, were synthesized via the chemical vapor deposition (CVD) method. The electron mobilities are much higher than those reported previously for CdSe one-dimensional (1D) nanostructures. High performance single CdSe NB field effect transistors (NB-FETs) and CdSe NB/p+-Si heterojunction light emitting diodes (HLEDs) are fabricated and studied. The NB-FETs have the best performance among the reported CdSe 1D nano-FETs with an on−off ratio of ∼3 × 108, a threshold voltage of ∼−4.1 V, and a maximum transconductance of ∼1.49 μS. The room temperature electroluminescence spectra of the HLEDs consist of only an intense CdSe band-edge emission peak (∼708 nm) with a full width at half-maximum of about 29 nm.

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