Quantum Dot Solar Cells: Hole Transfer as a Limiting Factor in Boosting the Photoconversion Efficiency
Citations Over TimeTop 10% of 2014 papers
Abstract
Semiconductor nanostructures are attractive for designing low-cost solar cells with tunable photoresponse. The recent advances in size- and shape-selective synthesis have enabled the design of quantum dot solar cells with photoconversion efficiencies greater than 5%. To make them competitive with other existing thin film or polycrystalline photovoltaic technologies, it is important to overcome kinetic barriers for charge transfer at semiconductor interfaces. This feature article focuses on the limitations imposed by slow hole transfer in improving solar cell performance and its role in the stability of metal chalcogenide solar cells. Strategies to improve the rate of hole transfer through surface-modified redox relays offer new opportunities to overcome the hole-transfer limitation. The mechanistic and kinetic aspects of hole transfer in quantum dot solar cells (QDSCs), nanowire solar cells (NWSCs), and extremely thin absorber (ETA) solar cells are discussed.
Related Papers
- → Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency(2015)76 cited
- → Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell(2015)20 cited
- → Numerical Analysis of PbSe/GaAs Quantum Dot Intermediate Band Solar Cell (QDIBSC)(2018)5 cited
- Developing high-efficiency compound semiconductor III-V Quantum-Dot solar cells(2016)
- Quantum-dot density dependences of solar cell properties of intermediate-band solar cells(2013)