Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy
Nano Letters2004Vol. 4(10), pp. 1969–1973
Citations Over TimeTop 10% of 2004 papers
F. J. Rueß, L. Oberbeck, M. Y. Simmons, Kuan Eng Johnson Goh, A. R. Hamilton, Toby Hallam, Steven R. Schofield, Neil J. Curson, Robert G. Clark
Abstract
We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve one of the key fabrication problems − connecting the STM-patterned buried phosphorus-doped devices, fabricated in the ultrahigh vacuum environment, to the outside world. The first devices demonstrate the feasibility of this technology and confirm the presence of quantum confinement in devices as electron propagation is laterally constricted by STM patterning.
Related Papers
- → Low temperature scanning tunneling spectroscopy of a DyBa2Cu3O7−x film(1990)3 cited
- → Controlled Manipulation of Single Atoms and Small Molecules Using the Scanning Tunneling Microscope(2016)3 cited
- → Low Temperature Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy Study at the α-Sn/Ge(111) Surface(2006)2 cited
- → Assessment of the resolution of scanning tunneling microscope with a tip of a boron-doped diamond(2013)
- Analysis of Single Molecular Device with Quinoidal Fused Oligosilole Derivatives Based on Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy.(2017)